• Patent Title: Method of treating target film and method of manufacturing semiconductor device
  • Application No.: US17546617
    Application Date: 2021-12-09
  • Publication No.: US11978626B2
    Publication Date: 2024-05-07
  • Inventor: Won Tae KooMir Im
  • Applicant: SK hynix Inc.
  • Applicant Address: KR Gyeonggi-do
  • Assignee: SK hynix Inc.
  • Current Assignee: SK hynix Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: IP & T GROUP LLP
  • Priority: KR 20210086124 2021.06.30
  • Main IPC: H01L21/02
  • IPC: H01L21/02
Method of treating target film and method of manufacturing semiconductor device
Abstract:
In a method of treating a target film, a plurality of pattern structures with sidewall surfaces facing each other are provided. A target film is formed on the sidewalls of the plurality of pattern structures. A plurality of nanoparticles are distributed on the target thin film. The target thin film is thermally treated by irradiating laser light from upper sides of the plurality of pattern structures to the target thin film. The irradiated laser light is scattered from the plurality of nanoparticles.
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