Invention Grant
- Patent Title: Method for manufacturing aluminum nitride-based transistor
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Application No.: US17297659Application Date: 2019-11-27
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Publication No.: US11978629B2Publication Date: 2024-05-07
- Inventor: Ok Hyun Nam , Ui Ho Choi
- Applicant: KOREA POLYTECHNIC UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION
- Applicant Address: KR Siheung-si
- Assignee: KOREA POLYTECHNIC UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION
- Current Assignee: KOREA POLYTECHNIC UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION
- Current Assignee Address: KR Siheung-si
- Agency: LEX IP MEISTER, PLLC
- Priority: KR 20180152578 2018.11.30 KR 20190062672 2019.05.28
- International Application: PCT/KR2019/016510 2019.11.27
- International Announcement: WO2020/111789A 2020.06.04
- Date entered country: 2021-05-27
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/20 ; H01L29/66 ; H01L29/778
Abstract:
The present invention relates to a method of manufacturing an AlN-based transistor. An AlN-based high electron mobility transistor (HEMT) element according to the present invention may use an AlN buffer layer, and include an AlGaN composition change layer inserted into a GaN/AlN interface to remove or suppress a degree of generation of a two-dimensional hole gas (2DHG), thereby decreasing an influence of a coulomb drag on a two-dimensional electron gas (2DEG) layer and improving mobility of a two-dimensional electron gas (2DEG).
Information query
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