- Patent Title: Semiconductor device including a semiconductor fin comprising a silicon germanium portion and an isolation structure at a sidewall of the silicon germanium portion
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Application No.: US17850857Application Date: 2022-06-27
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Publication No.: US11978632B2Publication Date: 2024-05-07
- Inventor: Cheng-Hsien Wu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- The original application number of the division: US16455370 2019.06.27
- Main IPC: H01L21/225
- IPC: H01L21/225 ; H01L21/762 ; H01L29/66 ; H01L29/78 ; H01L21/02 ; H01L21/3065
Abstract:
A semiconductor device includes a semiconductor substrate, an isolation structure, a gate structure, and a source/drain feature. The semiconductor substrate includes a semiconductor fin, wherein the semiconductor fin comprises a silicon germanium portion. The isolation structure is at a sidewall of a bottom portion of the silicon germanium portion. A top portion of the silicon germanium portion is higher than a top surface of the isolation structure, and an atomic concentration of germanium in the top portion of the silicon germanium portion is greater than an atomic concentration of germanium in the bottom portion of the silicon germanium portion. The gate structure is over a first portion of the silicon germanium portion of the semiconductor fin. The source/drain feature is over a second portion of the silicon germanium portion of the semiconductor fin.
Public/Granted literature
- US20220328314A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-10-13
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