Some examples of the present disclosure provide a method for manufacturing a wire layer. The method for manufacturing a wire layer includes steps in which a wafer having an opening is provided; conductive grains are deposited on the wafer, and on a bottom and a side wall of the opening to form a conductive film, during which a temperature of a surface of the wafer is lower than a flowing temperature of the conductive film, and when the temperature of the surface of the wafer is greater than or equal to the flowing temperature, the conductive film starting to flow; and after the conductive film is formed, the temperature of the surface of the wafer is elevated to perform a reflowing process, such that the conductive film is converted to a conductive layer filling up the opening.