Invention Grant
- Patent Title: Method for forming a semiconductor package structure
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Application No.: US17647167Application Date: 2022-01-05
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Publication No.: US11978698B2Publication Date: 2024-05-07
- Inventor: Zengyan Fan
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN 2110440019.8 2021.04.23
- Main IPC: H05K3/06
- IPC: H05K3/06 ; H01L21/48 ; H01L23/498
Abstract:
A method for forming the packaging structure includes: providing a substrate; forming a plurality of mutually independent conductive wires on the substrate, wherein a trench is provided between adjacent conductive wires; oxidizing side walls of each of the conductive wires to form a barrier layer; and forming a solder mask at least filling the trench.
Public/Granted literature
- US20220344251A1 SEMICONDUCTOR PACKAGE STRUCTURE AND METHOD FOR FORMING THEREOF Public/Granted day:2022-10-27
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