Invention Grant
- Patent Title: Semiconductor structure
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Application No.: US17989528Application Date: 2022-11-17
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Publication No.: US11978703B2Publication Date: 2024-05-07
- Inventor: Ya-Chin Chiu , Ming-Hsien Lin , Chia-Tung Hsu , Lun-Chieh Chiu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L21/768

Abstract:
A semiconductor structure includes a conductive line, a pad layer, and a barrier layer. The conductive line is embedded in a multi-level interconnect structure. The pad layer is over the conductive line. The barrier layer is between the conductive line and the pad layer. The pad layer is electrically connected to the conductive line through the barrier layer, and the barrier layer includes a first poly-crystalline layer and a second poly-crystalline layer. A boundary is between the first poly-crystalline layer and the second poly-crystalline layer.
Public/Granted literature
- US20230098999A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2023-03-30
Information query
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