Invention Grant
- Patent Title: Integrated circuit comprising a substrate equipped with a trap-rich region, and fabricating process
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Application No.: US17359872Application Date: 2021-06-28
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Publication No.: US11978710B2Publication Date: 2024-05-07
- Inventor: Didier Dutartre
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Crowe & Dunlevy LLC
- Priority: FR 51615 2018.02.23
- The original application number of the division: US16278313 2019.02.18
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/762 ; H01L23/66 ; H01L29/06
Abstract:
An integrated circuit includes a substrate having at least one first domain and at least one second domain that is different from the at least one first domain. A trap-rich region is provided in the substrate at the locations of the at least one second domain only. Locations of the at least one first domain do not include the trap-rich region.
Public/Granted literature
- US20210327834A1 INTEGRATED CIRCUIT COMPRISING A SUBSTRATE EQUIPPED WITH A TRAP-RICH REGION, AND FABRICATING PROCESS Public/Granted day:2021-10-21
Information query
IPC分类:
