Invention Grant
- Patent Title: Package
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Application No.: US18327851Application Date: 2023-06-01
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Publication No.: US11978716B2Publication Date: 2024-05-07
- Inventor: Sung-Feng Yeh , Hsien-Wei Chen , Ming-Fa Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- The original application number of the division: US15983064 2018.05.17
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/3105 ; H01L21/56 ; H01L21/768 ; H01L23/00 ; H01L23/31 ; H01L23/48 ; H01L25/00

Abstract:
A 3DIC structure includes a die, a conductive terminal, and a dielectric structure. The die is bonded to a carrier through a bonding film. The conductive terminal is disposed over and electrically connected to the die. The dielectric structure comprises a first dielectric layer and a second dielectric layer. The first dielectric layer is disposed laterally aside the die. The second dielectric layer is disposed between the first dielectric layer and the bonding film, and between the die and the boding film. A second edge of the second dielectric layer is more flat than a first edge of the first dielectric layer.
Public/Granted literature
- US20230307410A1 PACKAGE Public/Granted day:2023-09-28
Information query
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