Invention Grant
- Patent Title: Semiconductor device package having warpage control and method of forming the same
-
Application No.: US17370282Application Date: 2021-07-08
-
Publication No.: US11978729B2Publication Date: 2024-05-07
- Inventor: Heh-Chang Huang , Fu-Jen Li , Pei-Haw Tsao , Shyue-Ter Leu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L25/16
- IPC: H01L25/16 ; H01L21/56 ; H01L23/00 ; H01L23/31 ; H01L23/498 ; H01L25/00

Abstract:
A semiconductor device package and a method of forming the same are provided. The semiconductor device package includes a package substrate having a first surface and a second surface opposite to the first surface. Several integrated devices are bonded to the first surface of the package substrate. A first underfill element is disposed over the first surface and surrounds the integrated devices. A first molding layer is disposed over the first surface and surrounds the integrated devices and the first underfill element. A semiconductor die is bonded to the second surface of the package substrate. A second underfill element is disposed over the second surface and surrounds the semiconductor die. A second molding layer is disposed over the second surface and surrounds the semiconductor die and the second underfill element. Several conductive bumps are disposed over the second surface and adjacent to the second molding layer.
Public/Granted literature
- US20230012350A1 SEMICONDUCTOR DEVICE PACKAGE HAVING WARPAGE CONTROL AND METHOD OF FORMING THE SAME Public/Granted day:2023-01-12
Information query
IPC分类: