Invention Grant
- Patent Title: Methods of manufacturing semiconductor devices
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Application No.: US17014163Application Date: 2020-09-08
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Publication No.: US11978732B2Publication Date: 2024-05-07
- Inventor: Jhon Jhy Liaw
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- The original application number of the division: US14598268 2015.01.16
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L21/311 ; H01L21/768 ; H01L27/088 ; H01L29/417 ; H01L29/423 ; H10B10/00 ; H01L21/8234 ; H01L27/092

Abstract:
A method of manufacturing a semiconductor device includes forming a first masking layer and second masking layer over a substrate. The first masking layer includes an opening over an active area and a spacer in the substrate, and the second masking layer having a block blocks a portion of the opening in the first masking layer. The block in the second masking layer has boundaries located completely within the boundary of the opening in the first masking layer. The method includes performing an etching process, using the first masking layer and the second masking layer as an etching mask, to form a contact opening which exposes a portion of the active area and a portion of the spacer, and forming a contact plug in the contact opening and over the exposed portion of the active area and the exposed portion of the spacer.
Information query
IPC分类: