Invention Grant
- Patent Title: Digital blocks with electrically insulated and orthogonal polysilicon layers
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Application No.: US15840335Application Date: 2017-12-13
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Publication No.: US11978738B2Publication Date: 2024-05-07
- Inventor: Rakesh Dimri , Senthil Kumar Sundaramoorthy
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Andrew R. Ralston; Frank D. Cimino
- Main IPC: H01L27/118
- IPC: H01L27/118 ; H01L21/8234 ; H01L21/8238 ; H01L23/522 ; H01L23/528 ; H01L23/532 ; H01L27/02

Abstract:
A device comprising a semiconductor substrate. The device also comprising a digital block defined on the substrate and having multiple electronic elements. The device also comprises first and second poly layers coupling to the multiple electronic elements, the first and second poly layers extending in parallel through the digital block in a first direction. The device further comprising a third poly layer coupled to the first poly layer and extending through a gap in the second poly layer in a second direction orthogonal to the first direction poly.
Public/Granted literature
- US20190181153A1 DIGITAL BLOCKS WITH ELECTRICALLY INSULATED AND ORTHOGONAL POLYSILICON LAYERS Public/Granted day:2019-06-13
Information query
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