Invention Grant
- Patent Title: Capacitor, semiconductor device including the same, and method of fabricating capacitor
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Application No.: US18170977Application Date: 2023-02-17
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Publication No.: US11978761B2Publication Date: 2024-05-07
- Inventor: Jeonggyu Song , Younsoo Kim , Jaeho Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: HARNESS, DICKEY & PIERCE, P.L.C.
- Priority: KR 20200023706 2020.02.26
- The original application number of the division: US17060911 2020.10.01
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L49/02 ; H10B12/00

Abstract:
A capacitor includes: a bottom electrode; a top electrode over the bottom electrode; a dielectric film between the bottom electrode and the top electrode; and a doped Al2O3 film between the top electrode and the dielectric film, wherein the doped Al2O3 film includes a first dopant, and an oxide including the same element as the first dopant has a higher dielectric constant than a dielectric constant of Al2O3.
Public/Granted literature
- US20230207613A1 CAPACITOR, SEMICONDUCTOR DEVICE INCLUDING THE SAME, AND METHOD OF FABRICATING CAPACITOR Public/Granted day:2023-06-29
Information query
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