- Patent Title: Non-planar semiconductor device having conforming ohmic contacts
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Application No.: US16461071Application Date: 2016-12-12
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Publication No.: US11978776B2Publication Date: 2024-05-07
- Inventor: Ashutosh Sagar , Sridhar Govindaraju
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- International Application: PCT/US2016/066124 2016.12.12
- International Announcement: WO2018/111218A 2018.06.21
- Date entered country: 2019-05-15
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L21/8234 ; H01L29/45 ; H01L29/66 ; H01L29/78
Abstract:
An apparatus includes a non-planar semiconductor body; and a contact for the semiconductor body. The contact includes an epitaxial material that is formed on and contacts the semiconductor body. The contact includes a second material that is formed on and contacts the epitaxial material; and the second material at least partially conforms to an undercut of the epitaxial material.
Public/Granted literature
- US20200066841A1 NON-PLANAR SEMICONDUCTOR DEVICE HAVING CONFORMING OHMIC CONTACTS Public/Granted day:2020-02-27
Information query
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