Invention Grant
- Patent Title: Semiconductor structures and substrates thereof, and methods of manufacturing semiconductor structures and substrates thereof
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Application No.: US17273295Application Date: 2020-01-09
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Publication No.: US11978826B2Publication Date: 2024-05-07
- Inventor: Kai Cheng
- Applicant: ENKRIS SEMICONDUCTOR, INC.
- Applicant Address: CN Jiangsu
- Assignee: ENKRIS SEMICONDUCTOR, INC.
- Current Assignee: ENKRIS SEMICONDUCTOR, INC.
- Current Assignee Address: CN Jiangsu
- Agency: The Small Patent Group LLC
- Agent Christopher R. Carroll
- International Application: PCT/CN2020/071181 2020.01.09
- International Announcement: WO2021/138871A 2021.07.15
- Date entered country: 2021-03-03
- Main IPC: H01L33/20
- IPC: H01L33/20 ; H01L27/15 ; H01L33/00 ; H01L33/06

Abstract:
This application provides a semiconductor structure and substrate thereof, a method of manufacturing the semiconductor structure and substrate thereof. The substrate includes a plurality of unit areas, each of the unit areas includes at least two subunit areas, each of the subunit areas is provided with a groove, the groove is opened from a back side of the substrate; and in one of the unit areas, preset opening ratios of the subunit areas are different. A light-emitting layer is grown on a front side of the substrate; and in one of the unit areas, light-emitting wavelengths of the light-emitting layer in the subunit areas are different.
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