Invention Grant
- Patent Title: Memory management method, memory storage device and memory control circuit unit
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Application No.: US16554645Application Date: 2019-08-29
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Publication No.: US11983415B2Publication Date: 2024-05-14
- Inventor: Qi-Ao Zhu , Chong Peng , Zhi Wang , Wan-Jun Hong
- Applicant: Hefei Core Storage Electronic Limited
- Applicant Address: CN Anhui Province
- Assignee: Hefei Core Storage Electronic Limited
- Current Assignee: Hefei Core Storage Electronic Limited
- Current Assignee Address: CN Anhui
- Agency: JCIPRNET
- Priority: CN 1910618189.3 2019.07.10
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F3/06 ; G06F13/16 ; G11C7/10 ; G11C11/56
Abstract:
A memory management method for a memory storage device is provided. The memory management method includes: detecting effective information of at least one operation event performed by the memory storage device in a first mode; and adjusting a threshold value according to the effective information. The threshold value is configured to determine whether to instruct the memory storage device to enter the first mode.
Public/Granted literature
- US20210011630A1 MEMORY MANAGEMENT METHOD, MEMORY STORAGE DEVICE AND MEMORY CONTROL CIRCUIT UNIT Public/Granted day:2021-01-14
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