Invention Grant
- Patent Title: Local amplifier circuit, data readout method, and memory
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Application No.: US17854161Application Date: 2022-06-30
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Publication No.: US11984154B2Publication Date: 2024-05-14
- Inventor: Ying Wang
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN 2210044983.3 2022.01.14
- Main IPC: G11C7/02
- IPC: G11C7/02 ; G11C11/4094 ; G11C11/4096

Abstract:
A local amplifier circuit includes write control transistors, configured to connect, based on write enable signal, global data line to local data line; column selection transistors, configured to connect, based on column selection signal, bit line to local data line; first control PMOS transistor having gate connected to local data line, one of source or drain connected to global data line, and the other one connected to read control transistor; and second control PMOS transistor having gate connected to complementary local data line, one of source or drain connected to complementary global data line, and the other one connected to read control transistor. Read control transistors are configured to pull up or down levels at terminals of first control PMOS transistor and second control PMOS transistor, each of which is source or drain connected to a respective one of read control transistors, to preset level based on read enable signal.
Public/Granted literature
- US20230230634A1 LOCAL AMPLIFIER CIRCUIT, DATA READOUT METHOD, AND MEMORY Public/Granted day:2023-07-20
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