Invention Grant
- Patent Title: Method and apparatus of testing word line to detect fault after repair
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Application No.: US17662895Application Date: 2022-05-11
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Publication No.: US11984176B2Publication Date: 2024-05-14
- Inventor: Yulong Zhai
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: Changxin Memory Technologies, Inc.
- Current Assignee: Changxin Memory Technologies, Inc.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN 2110584147.X 2021.05.27
- Main IPC: G11C29/12
- IPC: G11C29/12

Abstract:
Embodiments of the present disclosure provide a method and an apparatus of testing a word line. After repair of a memory array is completed, if a target word line in a failure state exists in the memory array, a second numerical value is written into the target word line, and then it is determined, according to a numerical value outputted by each word line in the memory array, whether there are at least two word lines in an on-state in the memory array; if there are at least two word lines in an on-state simultaneously in the memory array, a current value generated by the target word line in an on-to-off process is detected; when the current value generated by the target word line in the on-to-off process is greater than a preset current threshold, it is determined that the target word line has a repair fault.
Public/Granted literature
- US20220383973A1 METHOD AND APPARATUS OF TESTING WORD LINE Public/Granted day:2022-12-01
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