Invention Grant
- Patent Title: Enabling or disabling on-die error-correcting code for a memory built-in self-test
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Application No.: US17807314Application Date: 2022-06-16
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Publication No.: US11984180B2Publication Date: 2024-05-14
- Inventor: Scott E. Schaefer
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Harrity & Harrity, LLP
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C29/10 ; G11C29/42 ; G11C29/44 ; G11C29/46

Abstract:
Implementations described herein relate to enabling or disabling on-die error-correcting code for a memory built-in self-test. A memory device may read one or more bits, associated with a memory built-in self-test, that are stored in a mode register of the memory device. The memory device may identify, based on the one or more bits, whether the memory built-in self-test is to be performed with on-die error-correcting code (ECC) disabled or with on-die ECC enabled. The memory device may perform the memory built-in self-test, and selectively test for one or more single-bit errors, based on identifying whether the memory built-in self-test is to be performed with the on-die ECC disabled or with the on-die ECC enabled.
Public/Granted literature
- US20230395177A1 ENABLING OR DISABLING ON-DIE ERROR-CORRECTING CODE FOR A MEMORY BUILT-IN SELF-TEST Public/Granted day:2023-12-07
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