Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof

Invention Grant

US11984348B2 Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof 有权

Patent Title: Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof
Application No.: US16864296

Application Date: 2020-05-01
Publication No.: US11984348B2

Publication Date: 2024-05-14
Inventor: Sasha Joseph Kweskin
Applicant: GlobalWafers Co., Ltd.
Applicant Address: TW Hsinchu
Assignee: GlobalWafers Co., Ltd.
Current Assignee: GlobalWafers Co., Ltd.
Current Assignee Address: TW Hsinchu
Agency: Armstrong Teasdale LLP
The original application number of the division: US16079373
Main IPC: H01L21/762
IPC: H01L21/762 ; H01L21/02 ; H01L27/12

Abstract:

A method is provided for preparing a semiconductor-on-insulator structure comprising a silicon nitride layer deposited by plasma deposition.

Public/Granted literature

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/71	..限定在组H01L21／70中的器件的特殊部件的制造（H01L21/28，H01L21/44，H01L21/48优先）
H01L21/76	...组件间隔离区的制作
H01L21/762	....介电区