Invention Grant
- Patent Title: Measurement device and method for semiconductor structure
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Application No.: US17509126Application Date: 2021-10-25
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Publication No.: US11984366B2Publication Date: 2024-05-14
- Inventor: Xin Huang
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN 2110832798.6 2021.07.22
- Main IPC: G01N21/88
- IPC: G01N21/88 ; G01N21/95 ; H01L21/66 ; H01L21/687

Abstract:
A measurement device and method for a semiconductor structure are provided. The measurement device for the semiconductor structure includes a bearing platform, a clamping mechanism, and an image acquisition system. The clamping mechanism is installed on the bearing platform and includes a clamp disposed along a vertical direction. The clamp is configured to clamp the semiconductor structure such that the semiconductor structure is clamped with a to-be-measured surface facing a side. The image acquisition system is disposed by a side of the clamping mechanism, and is configured to acquire a three-dimensional morphology of the semiconductor structure from the side.
Public/Granted literature
- US20230024724A1 MEASUREMENT DEVICE AND METHOD FOR SEMICONDUCTOR STRUCTURE Public/Granted day:2023-01-26
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