Invention Grant
- Patent Title: Semiconductor structure
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Application No.: US17373948Application Date: 2021-07-13
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Publication No.: US11984369B2Publication Date: 2024-05-14
- Inventor: ChihCheng Liu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN 2010260440.6 2020.04.03
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L27/092
Abstract:
A semiconductor structure includes: a substrate; an insulating region located in the substrate; a first conductor located above the insulating region and configured to collect charges; a second conductor at least partially located above the insulating region and configured to induce the charges of the first conductor; and a dielectric layer located between the first conductor and the second conductor to electrically insulate the first conductor from the second conductor.
Public/Granted literature
- US20210343607A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2021-11-04
Information query
IPC分类:
