Invention Grant
- Patent Title: Memory device with low density thermal barrier
-
Application No.: US17492185Application Date: 2021-10-01
-
Publication No.: US11984382B2Publication Date: 2024-05-14
- Inventor: Pengyuan Zheng , David Ross Economy , Yongjun J. Hu , Kent H. Zhuang , Robert K. Grubbs
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- The original application number of the division: US16400956 2019.05.01
- Main IPC: H01L23/373
- IPC: H01L23/373 ; H01L21/02 ; H01L21/768 ; H01L23/535

Abstract:
Methods, systems, and devices related to a memory device with a thermal barrier are described. The thermal barrier (e.g., a low density thermal barrier) may be positioned between an access line (e.g., a digit line or a word line) and a cell component. The thermal barrier may be formed on the surface of a barrier material by applying a plasma treatment to the barrier material. The thermal barrier may have a lower density than the barrier material and may be configured to thermally insulate the cell component from thermal energy generated in the memory device, among other benefits.
Public/Granted literature
- US20220020662A1 MEMORY DEVICE WITH LOW DENSITY THERMAL BARRIER Public/Granted day:2022-01-20
Information query
IPC分类: