Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US17456638Application Date: 2021-11-28
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Publication No.: US11984411B2Publication Date: 2024-05-14
- Inventor: Tong Wu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN 2110050743.X 2021.01.14
- Main IPC: H01L23/64
- IPC: H01L23/64 ; H01L49/02

Abstract:
A semiconductor structure includes a substrate and a medium layer located on a first face of the substrate, the substrate has a plurality of first metal layers therein, the medium layer has a magnetic core therein, an orthographic projection of the magnetic core on the first face has a closed ring pattern, the first metal layer has a first end and a second end opposite to each other, an orthographic projection of the first end on the first face is located within a region surrounded by the closed ring pattern.
Public/Granted literature
- US20220223547A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2022-07-14
Information query
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