A high-frequency power transistor comprises a transistor, at least one capacitor and a housing, which at least partially encloses the transistor and the capacitor. A first port for a high-frequency input and a gate DC voltage supply are connected to a gate contact of the transistor. A second port is connected to a drain contact of the transistor for a high-frequency output and drain DC voltage supply. A third port and fourth port are connected to a source contact of the transistor. All ports lead out of the same housing. The third port is connected via the capacitor to the source contact, and the fourth port is connected via at least one inductive element to the source contact, so that the third port provides a high-frequency ground, and the fourth port provides a floating low-frequency ground and source DC voltage supply.