Invention Grant
- Patent Title: Integrated circuit with backside power rail and backside interconnect
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Application No.: US17693153Application Date: 2022-03-11
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Publication No.: US11984441B2Publication Date: 2024-05-14
- Inventor: Shih-Wei Peng , Guo-Huei Wu , Jiann-Tyng Tzeng
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: FOLEY & LARDNER LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; G06F30/392 ; G06F30/394 ; G06F119/18 ; H01L21/8238 ; H01L23/528 ; H01L27/092

Abstract:
Disclosed embodiments herein relate to an integrated circuit including metal rails. In one aspect, the integrated circuit includes a first layer including a first metal rail and a second layer including a second metal rail, where the second layer is above the first layer along a first direction. In one aspect, the integrated circuit includes a third layer including an active region of a transistor, where the third layer is above the second layer along the first direction. In one aspect, the integrated circuit includes a fourth layer including a third metal rail, where the fourth layer is above the third layer along the first direction. In one aspect, the integrated circuit includes a fifth layer including a fourth metal rail, where the fifth layer is above the fourth layer along the first direction.
Public/Granted literature
- US20220199608A1 INTEGRATED CIRCUIT WITH BACKSIDE POWER RAIL AND BACKSIDE INTERCONNECT Public/Granted day:2022-06-23
Information query
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