The present disclosure provides an image sensor, which may include a driving layer, a negative electrode layer formed in the driving layer, a N-region layer formed above the negative electrode layer. The N-region layer includes multiple cylindrical structures formed of semiconductor materials. The image sensor may also include a light absorption layer formed above the N-region layer. The light absorption layer is composed of a multi-layer structure including a P-region layer formed using quantum dot semiconductor materials. The image sensor may further include a positive electrode layer formed above the light absorption layer and configured to receive incoming light signals.