Invention Grant
- Patent Title: Air spacer for a gate structure of a transistor
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Application No.: US17991560Application Date: 2022-11-21
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Publication No.: US11984489B2Publication Date: 2024-05-14
- Inventor: Yi-Hsiu Liu , Feng-Cheng Yang , Tsung-Lin Lee , Wei-Yang Lee , Yen-Ming Chen , Yen-Ting Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- The original application number of the division: US16523453 2019.07.26
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L21/311 ; H01L27/088 ; H01L29/66
Abstract:
A semiconductor structure includes a first device and a second device. The first device includes: a first gate structure formed over an active region and a first air spacer disposed adjacent to the first gate structure. The second device includes: a second gate structure formed over an isolation structure and a second air spacer disposed adjacent to the second gate structure. The first air spacer and the second air spacer have different sizes.
Public/Granted literature
- US20230088288A1 Air Spacer For A Gate Structure Of A Transistor Public/Granted day:2023-03-23
Information query
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