Invention Grant
- Patent Title: Film structure, element, and multilevel element
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Application No.: US17285633Application Date: 2019-03-20
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Publication No.: US11985835B2Publication Date: 2024-05-14
- Inventor: Myungmo Sung , Hongbum Kim , Jinwon Jung , Jinseon Park
- Applicant: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Applicant Address: KR Seoul
- Assignee: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Current Assignee: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Current Assignee Address: KR Seoul
- Agency: Sughrue Mion, PLLC
- Priority: KR 20180124405 2018.10.18 KR 20190021029 2019.02.22
- International Application: PCT/KR2019/003242 2019.03.20
- International Announcement: WO2020/080621A 2020.04.23
- Date entered country: 2021-04-15
- Main IPC: H10K10/46
- IPC: H10K10/46

Abstract:
The film structure according to an embodiment of the present invention includes at least one active monolayer having an energy level quantized in at least one axial direction and at least one barrier alternately stacked with the at least one active monolayer. Current flows through the active monolayer, and the current flow may be limited by the quantized energy level.
Public/Granted literature
- US20210384452A1 FILM STRUCTURE, ELEMENT, AND MULTILEVEL ELEMENT Public/Granted day:2021-12-09
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