An imaging device includes: a first electrode; a charge storage electrode disposed at a distance from the first electrode; a photoelectric conversion layer in contact with the first electrode and above the charge storage electrode, with an insulating layer between the charge storage electrode and the photoelectric conversion layer; and a second electrode on the photoelectric conversion layer. The portion of the insulating layer between the charge storage electrode and the photoelectric conversion layer includes a first region and a second region, the first region is formed with a first insulating layer, the second region is formed with a second insulating layer, and the absolute value of the fixed charge of the material forming the second insulating layer is smaller than the absolute value of the fixed charge of the material forming the first insulating layer.