Invention Grant
- Patent Title: Piezoelectric element
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Application No.: US17539422Application Date: 2021-12-01
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Publication No.: US11985899B2Publication Date: 2024-05-14
- Inventor: Kenichi Umeda , Yukihiro Okuno , Takami Arakawa
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP 19109611 2019.06.12
- Main IPC: H10N30/079
- IPC: H10N30/079 ; H10N30/00

Abstract:
A piezoelectric element includes, in sequence, a substrate, a lower electrode layer, a growth control layer, a piezoelectric layer including a perovskite-type oxide containing lead as a main component of an A site, and an upper electrode layer. The growth control layer includes a metal oxide represented by MdN1−dOe, where M is one or more metal elements capable of substituting for the A site of the perovskite-type oxide. When the electronegativity of M is X, 1.41X−1.05≤d≤A1·exp(−X/t1)+y0, where A1=1.68×1012, t1=0.0306, and y0=0.59958. The perovskite-type oxide is represented by (Pba1αa2)(Zrb1Tib2βb3)Oc, where 0.5
Public/Granted literature
- US20220093844A1 PIEZOELECTRIC ELEMENT Public/Granted day:2022-03-24
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