- Patent Title: Method for detecting defect in semiconductor fabrication process
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Application No.: US17386487Application Date: 2021-07-27
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Publication No.: US11988970B2Publication Date: 2024-05-21
- Inventor: Yuan-Ku Lan
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: Changxin Memory Technologies, Inc.
- Current Assignee: Changxin Memory Technologies, Inc.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN 2010162151.2 2020.03.10
- Main IPC: G03F7/00
- IPC: G03F7/00
Abstract:
A method for detecting a defect in a semiconductor fabrication process is disclosed. The method includes forming photoresist on a substrate; forming a fluorescent agent in the photoresist; and detecting the defect of the photoresist after being subjected to developing by utilizing the fluorescent agent.
Public/Granted literature
- US20210356870A1 METHOD FOR DETECTING DEFECT IN SEMICONDUCTOR FABRICATION PROCESS Public/Granted day:2021-11-18
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