Invention Grant
- Patent Title: Dynamic word line reconfiguration for NAND structure
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Application No.: US17888063Application Date: 2022-08-15
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Publication No.: US11990185B2Publication Date: 2024-05-21
- Inventor: Xiang Yang , YenLung Li , James Kai
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Addison
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Austin
- Agency: Vierra Magen Marcus LLP
- Main IPC: G11C16/08
- IPC: G11C16/08 ; G11C16/04 ; G11C16/10 ; G11C16/16

Abstract:
Technology is disclosed herein reconfiguring word lines as either data word lines or dummy word lines. In a sub-block mode reconfigurable word lines are used as dummy word lines that provide electrical isolation between data word lines in a block. The block may be divided into an upper tier, a middle tier, and a lower tier, with the reconfigurable word lines within the middle tier. In a full-block mode the reconfigurable group of the word lines are used as data word lines. Because the reconfigurable word lines are used as data word lines in the full-block mode storage capacity is greater in the full-block mode than in the sub-block mode. Moreover, because the sub-blocks are smaller in size but greater in number than the full-blocks, the memory system may be provisioned with fewer blocks and still meet user storage requirements in both the full-block mode and the sub-block mode.
Public/Granted literature
- US20240055051A1 DYNAMIC WORD LINE RECONFIGURATION FOR NAND STRUCTURE Public/Granted day:2024-02-15
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