Invention Grant
- Patent Title: Semiconductor device and wiring structure
-
Application No.: US18056684Application Date: 2022-11-17
-
Publication No.: US11990407B2Publication Date: 2024-05-21
- Inventor: Tomohiro Hasegawa , Kouji Nakao , Hiroshi Nasu
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP 20153060 2020.09.11
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/522 ; H01L27/02

Abstract:
A semiconductor device includes first and second wiring layers, and first and second via plugs. The first wiring layer has parallel tracks along which wirings are laid out, the tracks including first and second outer tracks and an inner track between the first and second outer tracks, the wirings including a first line laid out along the first outer track and having an end portion that is laid out along the first outer track, and a second line laid out along the inner track and having an end portion that is laid out along the first outer track. The first via plug is in contact with the end portion of the first line and extends between the first and second wiring layers, and the second via plug is in contact with the end portion of the second line and extends between the first and second wiring layers.
Public/Granted literature
- US20230085775A1 SEMICONDUCTOR DEVICE AND WIRING STRUCTURE Public/Granted day:2023-03-23
Information query
IPC分类: