Invention Grant
- Patent Title: Power amplifier modules including topside cooling interfaces and methods for the fabrication thereof
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Application No.: US16851895Application Date: 2020-04-17
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Publication No.: US11990872B2Publication Date: 2024-05-21
- Inventor: Geoffrey Tucker , Lakshminarayan Viswanathan , Jeffrey Kevin Jones , Elie A. Maalouf
- Applicant: NXP USA, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H01L21/56 ; H01L23/00 ; H01L23/31 ; H01L23/528 ; H03F1/30 ; H03F3/21

Abstract:
Power amplifier modules (PAMs) having topside cooling interfaces are disclosed, as are methods for fabricating such PAMs. In embodiments, the method includes attaching the RF power die to a die support-surface of a module substrate. The RF power die is attached to the module substrate in an inverted orientation such that a frontside of the RF power die faces the module substrate. When attaching the RF power die to the module substrate, a frontside input/output interface of the RF power die is electrically coupled to corresponding substrate interconnect features of the module substrate. The method further includes providing a primary heat extraction path extending from the transistor channel of the RF power die to a topside cooling interface of the PAM in a direction opposite the module substrate.
Public/Granted literature
- US20210328552A1 POWER AMPLIFIER MODULES INCLUDING TOPSIDE COOLING INTERFACES AND METHODS FOR THE FABRICATION THEREOF Public/Granted day:2021-10-21
Information query
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