Invention Grant
- Patent Title: Radio-frequency power-amplifying element
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Application No.: US17168904Application Date: 2021-02-05
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Publication No.: US11990873B2Publication Date: 2024-05-21
- Inventor: Yasunari Umemoto , Shaojun Ma , Shigeki Koya
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto-fu
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto-fu
- Agency: Studebaker & Brackett PC
- Priority: JP 20026220 2020.02.19
- Main IPC: H03F1/30
- IPC: H03F1/30 ; H03F3/19 ; H03F3/21

Abstract:
A first amplifier circuit in a preceding stage, a second amplifier circuit in a subsequent stage, and a ground external connection terminal are disposed on a substrate. The first and second amplifier circuits each include bipolar transistors, capacitive elements for the respective bipolar transistors, and resistive elements for the respective bipolar transistors. The bipolar transistors each include separate base electrodes, that is, a first base electrode for radio frequency and a second base electrode for biasing. The bipolar transistors of the second amplifier circuit include emitter electrodes connected to the ground external connection terminal. The minimum spacing between the first base electrode and an emitter mesa layer of at least one of the bipolar transistors of the second amplifier circuit is greater than the minimum spacing between the first base electrode and am emitter mesa layer of each of the bipolar transistors of the first amplifier circuit.
Public/Granted literature
- US20210257973A1 RADIO-FREQUENCY POWER-AMPLIFYING ELEMENT Public/Granted day:2021-08-19
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