Invention Grant
- Patent Title: Bulk acoustic wave resonator and formation method thereof
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Application No.: US17134681Application Date: 2020-12-28
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Publication No.: US11990889B2Publication Date: 2024-05-21
- Inventor: Kuo-Lung Weng , Chia-Ta Chang , Tzu-Sheng Hsieh , Chun-Ju Wei
- Applicant: WIN SEMICONDUCTORS CORP.
- Applicant Address: TW Taoyuan
- Assignee: WIN SEMICONDUCTORS CORP.
- Current Assignee: WIN SEMICONDUCTORS CORP.
- Current Assignee Address: TW Taoyuan
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H03H9/17
- IPC: H03H9/17 ; H03H3/02 ; H03H9/02 ; H03H9/13

Abstract:
A bulk acoustic wave resonator and a formation method thereof are provided. The method for forming the bulk acoustic wave resonator includes forming a sacrificial structure on a substrate. A seed layer is formed on the sacrificial structure. A bottom electrode is formed on the seed layer. A piezoelectric layer is formed on the bottom electrode. A top electrode is formed on the piezoelectric layer. The sacrificial structure is removed to form a cavity. The seed layer is etched through the cavity.
Public/Granted literature
- US20220209741A1 BULK ACOUSTIC WAVE RESONATOR AND FORMATION METHOD THEREOF Public/Granted day:2022-06-30
Information query
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