Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US17389486Application Date: 2021-07-30
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Publication No.: US11991874B2Publication Date: 2024-05-21
- Inventor: Longyang Chen , Gongyi Wu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN 2010812819.3 2020.08.13
- Main IPC: H10B12/00
- IPC: H10B12/00

Abstract:
A semiconductor structure includes a substrate, a bit line, and a first isolation layer. A groove is set in the substrate. A bottom end of the bit line is set in the groove. The first isolation layer is at least partially set on a sidewall of the bit line, and the first isolation layer is in direct contact with the bit line.
Information query