Invention Grant
- Patent Title: Nitride phosphor and method for producing same
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Application No.: US17657111Application Date: 2022-03-29
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Publication No.: US11993739B2Publication Date: 2024-05-28
- Inventor: Takayuki Shinohara , Shimpei Kinoshita
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan
- Agency: Hunton Andrews Kurth LLP
- Priority: JP 21057955 2021.03.30 JP 21186227 2021.11.16
- Main IPC: C09K11/77
- IPC: C09K11/77 ; C01B21/06

Abstract:
Provided a method for producing a nitride phosphor. The method includes preparing a mixture that comprises a first nitride and a cerium source, the first nitride comprising, as a host crystal, a crystal having the same crystal structure as CaAlSiN3; and performing a heat treatment of the mixture at a temperature of 1,300° C. to 1,900° C. to obtain a second nitride. The first nitride comprises aluminum, silicon, nitrogen, and at least one selected from the group consisting of lithium, calcium, and strontium.
Public/Granted literature
- US20220315837A1 NITRIDE PHOSPHOR AND METHOD FOR PRODUCING SAME Public/Granted day:2022-10-06
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