Invention Grant
- Patent Title: Gas nozzle, substrate processing apparatus, and substrate processing method
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Application No.: US17304119Application Date: 2021-06-15
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Publication No.: US11993848B2Publication Date: 2024-05-28
- Inventor: Kuniyasu Sakashita , Satoru Ogawa
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Armstrong Teasdale LLP
- Priority: JP 20106472 2020.06.19
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/34 ; C23C16/40 ; H01L21/02
Abstract:
A gas nozzle extending vertically inward of an inner wall of a processing container having a substantially cylindrical shape, includes a plurality of first gas holes provided at intervals in a longitudinal direction; and a second gas hole provided at a tip of the gas nozzle and oriented toward a side opposite to a side in which the plurality of first gas holes are provided in a plan view from the longitudinal direction, wherein the second gas hole has an opening area larger than an opening area of each of the first gas holes.
Public/Granted literature
- US20210395893A1 GAS NOZZLE, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING METHOD Public/Granted day:2021-12-23
Information query
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