Invention Grant
- Patent Title: RF peak detector circuit
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Application No.: US17512552Application Date: 2021-10-27
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Publication No.: US11994548B2Publication Date: 2024-05-28
- Inventor: Arnab Das
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Michael T. Gabrik; Frank D. Cimino
- Main IPC: G01R29/08
- IPC: G01R29/08 ; H03F3/193 ; H03G3/30

Abstract:
An apparatus comprises a transistor pair including a first metal oxide semiconductor field effect transistor (MOSFET) coupled to a second MOSFET. The first MOSFET includes a first gate terminal and a first drain terminal. The second MOSFET comprises a second gate terminal and a second drain terminal. The first gate terminal is configured to receive a first signal. The second gate terminal is configured to receive a second signal that is phase shifted with respect to the first signal. An output node is coupled to the first drain terminal and the second drain terminal and configured to output a third signal that is proportional to a power of the first signal and the second signal.
Public/Granted literature
- US20230128266A1 RF PEAK DETECTOR CIRCUIT Public/Granted day:2023-04-27
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