Invention Grant
- Patent Title: Semiconductor circuits and devices based on low-energy consumption semiconductor structures exhibiting multi-valued magnetoelectric spin hall effect
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Application No.: US16308337Application Date: 2017-06-12
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Publication No.: US11996129B2Publication Date: 2024-05-28
- Inventor: Darrell Schlom , Mostafizur Rahman , Kelin Kuhn , John Heron
- Applicant: Cornell University , The Curators of the University of Missouri , The Regents of the University of Michigan , Oregon State University , Mostafizur Rahman , Kelin Kuhn , John Heron
- Applicant Address: US NY Ithaca
- Assignee: Cornell University,The Curators of the University of Missouri,The Regents of the University of Michigan,Oregon State University
- Current Assignee: Cornell University,The Curators of the University of Missouri,The Regents of the University of Michigan,Oregon State University
- Current Assignee Address: US NY Ithaca; US MO Columbia; US MI Ann Arbor; US OR Corvallis
- Agency: COZEN O'CONNOR
- International Application: PCT/US2017/037051 2017.06.12
- International Announcement: WO2017/214628A 2017.12.14
- Date entered country: 2018-12-07
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C11/16 ; G11C11/18 ; G11C11/56 ; H10N52/85
Abstract:
A semiconductor device includes ferromagnetic, magnetostrictive layer that exhibits a biaxial magnetic anisotropy and an underlying structure exhibits a spin Hall effect to provide a conversion between electrical energy and magnetic energy with more than two distinctive magnetic states, wherein the underlying structure includes a piezoelectric material structure and a spin Hall metal layer.
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