• Patent Title: Semiconductor device including charge pump circuit to generate on device high voltages for memory operations
  • Application No.: US17565888
    Application Date: 2021-12-30
  • Publication No.: US11996159B2
    Publication Date: 2024-05-28
  • Inventor: Jong Seok Kim
  • Applicant: SK hynix Inc.
  • Applicant Address: KR Gyeonggi-do
  • Assignee: SK hynix Inc.
  • Current Assignee: SK hynix Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: IP & T GROUP LLP
  • Priority: KR 20210102622 2021.08.04
  • Main IPC: G11C5/14
  • IPC: G11C5/14
Semiconductor device including charge pump circuit to generate on device high voltages for memory operations
Abstract:
A semiconductor device includes: a charge pump circuit configured to generate an output voltage by pumping an input voltage according to first and second main clocks, a voltage detection circuit configured to generate a comparison signal by comparing the output voltage with a reference voltage, and a driving control circuit configured to selectively invert first and second external clocks at a start time of an activation period of the comparison signal to receive the inverted clocks as first and second internal clocks, to generate the first and second main clocks according to the first and second internal clocks during the activation period while controlling a transition order so that the second main clock transitions after the first main clock transitions, and to store logic levels of the first and second main clocks, respectively, at an end time of the activation period.
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