Invention Grant
- Patent Title: Plasma generating device
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Application No.: US17912226Application Date: 2021-03-29
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Publication No.: US11996278B2Publication Date: 2024-05-28
- Inventor: Naoki Takahashi
- Applicant: ATONARP INC.
- Applicant Address: JP Tokyo
- Assignee: ATONARP INC.
- Current Assignee: ATONARP INC.
- Current Assignee Address: JP Tokyo
- Agency: BUCHANAN INGERSOLL & ROONEY PC
- Priority: JP 20062862 2020.03.31
- International Application: PCT/JP2021/013168 2021.03.29
- International Announcement: WO2021/200773A 2021.10.07
- Date entered country: 2022-09-16
- Main IPC: H01J49/10
- IPC: H01J49/10 ; H01J49/42 ; H05H1/30

Abstract:
A plasma generating device includes: a chamber which is equipped with a dielectric wall structure and into which sample gas to be measured flows; an RF supplying mechanism that generates plasma inside the chamber using an electric field and/or a magnetic field through the dielectric wall structure; and a floating potential supplying mechanism that includes a first electrode disposed along an inner surface of the chamber. The RF supplying mechanism may include an RF field forming unit disposed in a first direction with respect to the chamber and the first electrode may include an electrode disposed in a second direction with respect to the chamber.
Public/Granted literature
- US11961730B2 Plasma generating device Public/Granted day:2024-04-16
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