The disclosure provides a gallium oxide film based on sapphire substrate as well as a growth method and an application thereof. The gallium oxide film based on sapphire substrate is prepared by a method below, including: forming more than one α-(AlxGa1-x)2O3 strain buffering layers on the sapphire substrate by means of pulsed epitaxial growth, wherein 0.99≥x≥0.01; and forming gallium oxide epitaxial layers on the α-(AlxGa1-x)2O3 strain buffering layers. The growth method provided can not only avoid the technical difficulty of contradictory epitaxial temperatures of α-Ga2O3 and α-Al2O3, but also effectively reduce the defect density of α-Ga2O3 epitaxial film, thus further improving the crystal quality of the α-Ga2O3 epitaxial film materials.