Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17469091Application Date: 2021-09-08
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Publication No.: US11996344B2Publication Date: 2024-05-28
- Inventor: Shoichiro Omae , Hiroshi Ishino
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: POSZ LAW GROUP, PLC
- Priority: JP 19043884 2019.03.11
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H01L23/00 ; H01L23/31 ; H01L23/495

Abstract:
A semiconductor device includes: a semiconductor element having a first main electrode and a second main electrode; a first heat dissipation member and a second heat dissipation member; and a lead frame including a first main terminal connected to the first heat dissipation member and a second main terminal connected to the second main electrode. The second main terminal includes a connection portion connected with the second main electrode, a facing portion extending from the connection portion and facing the first heat dissipation member, and a non-facing portion. The non-facing portion and the first main terminal are arranged in a direction orthogonal to a thickness direction. A side surface of the first main terminal and a side surface of the non-facing portion of the second main terminal face each other.
Public/Granted literature
- US20210407881A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-12-30
Information query
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