Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17746069Application Date: 2022-05-17
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Publication No.: US11996347B2Publication Date: 2024-05-28
- Inventor: Yuhei Nishida
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Agency: Rabin & Berdo, P.C.
- Priority: JP 21086663 2021.05.24
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/373 ; H01L23/495

Abstract:
A semiconductor device has a resistance element including a metal block, a resin layer disposed on the metal block, and a resistance film disposed on the resin layer and an insulated circuit board including an insulating plate and a circuit pattern disposed on the insulating plate and having a bonding area on a front surface thereof to which a back surface of the metal block of the resistance element is bonded. The area of the circuit pattern is larger in plan view than that of a front surface of the resistance element. The metal block has a thickness greater than that of the circuit pattern in a direction orthogonal to the back surface of the metal block. As a result, the metal block properly conducts heat generated by the resistance film of the resistance element to the circuit pattern.
Public/Granted literature
- US20220375818A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-11-24
Information query
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