Invention Grant
- Patent Title: Semiconductor device
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Application No.: US18298160Application Date: 2023-04-10
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Publication No.: US11996354B2Publication Date: 2024-05-28
- Inventor: Koshun Saito , Hiroyuki Sakairi , Yasufumi Matsuoka , Kenichi Yoshimochi
- Applicant: Rohm Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: HSML P.C.
- Priority: JP 19090488 2019.05.13
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/00

Abstract:
A semiconductor device provided with first and second semiconductor element each having an obverse and a reverse surface with a drain electrode, source electrode and gate electrode provided on the obverse surface. The semiconductor device is also provided with a control element electrically connected to the gate electrodes of the respective semiconductor elements, and with a plurality of leads, which include a first lead carrying the first semiconductor element, a second lead carrying the second semiconductor element, and a third lead carrying the control element. The first and second leads overlap with each other as viewed in a first direction perpendicular to the thickness direction of the semiconductor device, and the third lead overlaps with the first and second leads as viewed in a second direction perpendicular to the thickness direction and the first direction.
Public/Granted literature
- US20230245962A1 SEMICONDUCTOR DEVICE Public/Granted day:2023-08-03
Information query
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