Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
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Application No.: US17632503Application Date: 2019-10-17
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Publication No.: US11996355B2Publication Date: 2024-05-28
- Inventor: Atsushi Maeda , Tatsuya Kawase , Yuji Imoto
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2019/040828 2019.10.17
- International Announcement: WO2021/075016A 2021.04.22
- Date entered country: 2022-02-02
- Main IPC: H01L23/053
- IPC: H01L23/053 ; H01L21/52 ; H01L23/498

Abstract:
A semiconductor device includes a semiconductor element and a lead part. The semiconductor element is mounted on a circuit pattern provided on an insulating substrate. The lead part has a plate shape and is bonded to the semiconductor element with a first bonding material interposed therebetween. The lead part includes a lead body and a bonding component. The lead body includes an opening part provided corresponding to a mounting position of the semiconductor element. The bonding component is provided in the opening part and on the semiconductor element. The bonding component is bonded at a lower surface thereof to the semiconductor element by the first bonding material and bonded at an outer peripheral part thereof to an inner periphery of the opening part by a second bonding material.
Public/Granted literature
- US20220285254A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2022-09-08
Information query
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