Invention Grant
- Patent Title: Semiconductor device with stacking structure
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Application No.: US17563291Application Date: 2021-12-28
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Publication No.: US11996390B2Publication Date: 2024-05-28
- Inventor: Tse-Yao Huang
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agent Xuan Zhang
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/00 ; H01L23/498 ; H01L25/00 ; H01L25/10

Abstract:
The present application discloses a semiconductor device with stacking structures. The semiconductor device includes a bottom die; a first stacking structure including a first controller die positioned on the bottom die, and a plurality of first storage dies stacked on the first controller die; and a second stacking structure including a second controller die positioned on the bottom die, and a plurality of second storage dies stacked on the second controller die. The plurality of first storage dies respectively include a plurality of first storage units configured as a floating array. The plurality of second storage dies include a plurality of second storage units respectively including an insulator-conductor-insulator structure.
Public/Granted literature
- US20230207526A1 SEMICONDUCTOR DEVICE WITH STACKING STRUCTURE Public/Granted day:2023-06-29
Information query
IPC分类: