Invention Grant
- Patent Title: Fin field-effect transistor and method of forming the same
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Application No.: US17873853Application Date: 2022-07-26
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Publication No.: US11996470B2Publication Date: 2024-05-28
- Inventor: Jian-Jou Lian , Tzu Ang Chiang , Ming-Hsi Yeh , Chun-Neng Lin , Po-Yuan Wang , Chieh-Wei Chen
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: FOLEY & LARDNER LLP
- The original application number of the division: US17070634 2020.10.14
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/8234 ; H01L29/78
Abstract:
A semiconductor device includes a semiconductor fin. The semiconductor device includes first spacers over the semiconductor fin. The semiconductor device includes second spacers over the semiconductor fin. The second spacers vertically extend farther from the semiconductor fin than the first spacers. The semiconductor device includes a metal gate over the semiconductor fin, the metal gate is sandwiched by the first spacers. The metal gate includes a glue layer that contains tantalum nitride.
Public/Granted literature
- US20220359713A1 Fin Field-Effect Transistor and Method of Forming The Same Public/Granted day:2022-11-10
Information query
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